 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE243/D Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low-current, high-speed switching applications. * High Collector-Emitter Sustaining Voltage -- VCEO(sus) = 100 Vdc (Min) -- MJE243, MJE253 * High DC Current Gain @ IC = 200 mAdc hFE = 40 - 200 hFE = 40 - 120 -- MJE243, MJE253 * Low Collector-Emitter Saturation Voltage -- VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc * High Current Gain Bandwidth Product -- fT = 40 MHz (Min) @ IC = 100 mAdc * Annular Construction for Low Leakages ICBO = 100 nAdc (Max) @ Rated VCB MAXIMUM RATINGS MJE243* PNP MJE253* *Motorola Preferred Device NPN 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS TC PD, POWER DISSIPATION (WATTS) III I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII II I IIII I II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII IIII I II I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I IIII I II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIII I II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII Rating Symbol VCEO VCB VEB IC IB PD PD Value 100 100 7.0 4.0 8.0 10 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate @ 25_C Operating and Storage Junction Temperature Range 15 0.12 Watts W/ac Watts W/_C 1.5 0.012 TJ, Tstg - 65 to + 150 CASE 77-08 TO-225AA _C THERMAL CHARACTERISTICS Characteristic Symbol JC JA Max Unit Thermal Resistance, Junction to Case 8.34 83.4 _C/W _C/W Thermal Resistance, Junction to Ambient 16 1.6 TA PD, POWER DISSIPATION (WATTS) 12 1.2 8.0 0.8 4.0 0.4 0 20 40 60 80 100 120 140 0 160 T, TEMPERATURE (C) Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 7 (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII III I I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MJE243 MJE253 DYNAMIC CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Current-Gain -- Bandwidth Product (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) Base-Emitter On Voltage (IC = 500 mAdc, VCE = 1.0 Vdc) Base-Emitter Saturation Voltage (IC = 2.0 Adc, IB = 200 mAdc) Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) DC Current Gain (IC = 200 mAdc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCE = 100 Vdc, IE = 0, TC = 125_C) Collector-Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0) 2 +11 V 0 tr, tf 10 ns DUTY CYCLE = 1.0% t, TIME (ns) - 9.0 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES Figure 2. Switching Time Test Circuit 25 s 51 RB Characteristic -4 V D1 VCC + 30 V RC SCOPE 100 500 300 200 1K 50 30 20 10 5 3 2 1 0.01 Motorola Bipolar Power Transistor Device Data 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 IC, COLLECTOR CURRENT (AMPS) NPN MJE243 PNP MJE253 VCEO(sus) VCE(sat) VBE(sat) VBE(on) Symbol ICBO IEBO Cob hFE fT tr td Min 100 40 40 15 -- -- -- -- -- -- -- -- Max 180 -- 1.5 1.8 0.3 0.6 0.1 0.1 0.1 50 -- -- Figure 3. Turn-On Time VCC = 30 V IC/IB = 10 TJ = 25C 3 5 pF -- Adc Adc MHz Unit Vdc Vdc Vdc Vdc 10 MJE243 MJE253 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.02 0 (SINGLE PULSE) 0.05 0.02 0.01 D = 0.5 0.2 0.1 JC(t) = r(t) JC JC = 8.34C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 20 50 100 200 0.05 0.1 0.2 0.5 1.0 2.0 t, TIME (ms) 5.0 10 Figure 4. Thermal Response 10 IC, COLLECTOR CURRENT (AMP) 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 1.0 1.0 ms dc TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 100 s 500 s 5.0 ms MJE243/MJE253 50 70 100 2.0 3.0 5.0 7.0 10 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150 _C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. v Figure 5. Active Region Safe Operating Area 10K 5K 3K 2K 1K t, TIME (ns) 500 300 200 100 50 30 20 10 0.01 ts VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C 200 TJ = 25C 100 C, CAPACITANCE (pF) 70 50 30 20 tf NPN MJE243 PNP MJE253 3 5 10 10 1.0 2.0 MJE243 (NPN) MJE253 (PNP) 3.0 5.0 7.0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 50 70 100 Cob Cib 0.2 0.3 0.5 1 2 0.02 0.03 0.05 0.1 IC, COLLECTOR CURRENT (AMPS) Figure 6. Turn-Off Time Figure 7. Capacitance Motorola Bipolar Power Transistor Device Data 3 MJE243 MJE253 NPN MJE243 500 300 200 hFE , DC CURRENT GAIN 100 70 50 30 20 10 7.0 5.0 0.04 0.06 TJ = 150C 25C - 55C VCE = 1.0 V VCE = 2.0 V hFE , DC CURRENT GAIN 200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.04 0.06 TJ = 150C 25C - 55C VCE = 1.0 V VCE = 2.0 V PNP MJE253 0.1 1.0 0.2 0.4 0.6 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 Figure 8. DC Current Gain 1.4 TJ = 25C 1.2 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 VCE(sat) 0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V IC/IB = 10 5.0 1.4 TJ = 25C 1.2 1.0 VBE(sat) @ IC/IB = 10 0.8 0.6 0.4 0.2 VCE(sat) 0 0.04 0.06 0.1 VBE @ VCE = 1.0 V IC/IB = 10 5.0 0.2 0.4 0.6 1.0 2.0 4.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 9. "On" Voltages V, TEMPERATURE COEFFICIENTS (mV/ C) + 2.0 + 1.5 + 1.0 + 0.5 0 - 0.5 - 1.0 - 1.5 - 2.0 *APPLIES FOR IC/IB hFE/3 V, TEMPERATURE COEFFICIENTS (mV/ C) + 2.5 + 2.5 + 2.0 + 1.5 + 1.0 + 0.5 0 - 0.5 - 1.0 - 1.5 - 2.0 - 2.5 0.04 0.06 0.1 0.2 0.4 VB FOR VBE - 55C to 25C 25C to 150C - 55C to 25C 0.6 1.0 2.0 4.0 *VC FOR VCE(sat) 25C to 150C *APPLIES FOR IC/IB hFE/3 *VC FOR VCE(sat) 25C to 150C - 55C to 25C 25C to 150C VB FOR VBE 0.1 - 55C to 25C - 2.5 0.04 0.06 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 IC, COLLECTOR CURRENT (AMP) Figure 10. Temperature Coefficients 4 Motorola Bipolar Power Transistor Device Data MJE243 MJE253 PACKAGE DIMENSIONS -B- U Q F M C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 --- -A- 123 H K V G S D 2 PL 0.25 (0.010) M J R 0.25 (0.010) A M A M M B M B M STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 77-08 TO-225AA ISSUE V Motorola Bipolar Power Transistor Device Data 5 MJE243 MJE253 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data *MJE243/D* MJE243/D |
Price & Availability of MJE243
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |